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Título

Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

AutorFuster, David ; Rivera de Mena, Antonio ; Alén, Benito ; Alonso-González, Pablo ; González Díez, Yolanda ; González Sotos, Luisa
Palabras claveCrystallisation
III-V semiconductors
Indium compounds
Molecular beam epitaxial growth
Nucleation, self-assembly
Semiconductor growth
Semiconductor quantum dots
Surface reconstruction
Fecha de publicación1-abr-2009
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters, 94, 133106 (2009)
ResumenWe have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs(4×2)(2×4) surface reconstruction changes. Based on the results obtained by in situ characterization techniques, we propose that the quantum dots formation is possible due to the nucleation of In droplets over the InAs(4×2) surface during the In deposition step and their subsequent crystallization under the As step.
Versión del editorhttp://link.aip.org
http://dx.doi.org/10.1063/1.3108087
URIhttp://hdl.handle.net/10261/15094
DOI10.1063/1.3108087
ISSN0003-6951
Aparece en las colecciones: (IMN-CNM) Artículos
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