English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/149439
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


TFET-based Well Capacity Adjustment in Active Pixel Sensor for Enhanced High Dynamic Range

AuthorsFernández-Berni, J. ; Niemier, M.; Hu, X.S.; Lu, H.; Li, W.; Fay, P.; Carmona-Galán, R. ; Rodríguez-Vázquez, Ángel
Issue Date2017
PublisherInstitute of Electrical and Electronics Engineers
CitationElectronics Letters, 53(9): 427 (2017)
AbstractWe present a Tunnel Field-Effect Transistor (TFET)-based pixel circuit for well capacity adjustment that does not require subthreshold operation on the part of the reset transistor. In CMOS, this subthreshold operation leads to temporal noise, distortion and Fixed Pattern Noise (FPN), becoming a primary limiting performance factor. In the proposed circuit, we exploit the asymmetric conduction associated with TFETs. This property, arising from the inherent physical structure of the device, provides the selective well adjustments during photo-integration which are demanded for achieving High Dynamic Range (HDR). A GaNbased heterojunction TFET has been designed according to the specific requirements for this application
Publisher version (URL)https://doi.org/10.1049/el.2016.4548
Appears in Collections:(IMSE-CNM) Artículos
Files in This Item:
File Description SizeFormat 
Electronics_Letters.pdf396,4 kBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.