English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/149355
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


A New Vertical JFET Power Device for Harsh Radiation Environments

AuthorsFernández-Martínez, Pablo; Flores, David; Hidalgo, Salvador; Jordà, Xavier; Perpiñá Giribet, Xavier; Quirion, David; Ré, Lucía; Ullán, Miguel; Vellvehi Hernández, Miquel
Issue Date20-Feb-2017
PublisherMultidisciplinary Digital Publishing Institute
CitationEnergies 10 (2): 256 (2017)
AbstractAn increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution.
Publisher version (URL)https://doi.org/10.3390/en10020256
Identifiersdoi: 10.3390/en10020256
Appears in Collections:(IMB-CNM) Artículos
Files in This Item:
File Description SizeFormat 
energies-10-00256-v2.pdf6,03 MBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.