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Título

Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution

AutorFuster, David ; Alén, Benito ; González Sotos, Luisa ; González Díez, Yolanda ; Martínez-Pastor, Juan; González Sagardoy, María Ujué ; García Martínez, Jorge Manuel
Palabras claveSingle quantum wires
Molecular beam epitaxy
Fecha de publicación3-ene-2007
EditorInstitute of Physics Publishing
CitaciónNanotechnology 18(3): 035604 (2007)
ResumenIn this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θc, determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θR<θc. At this θR, the spontaneous formation of isolated quantum wires takes place. For θ>θR this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ = θc. These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of InAs/InP self-assembled single quantum wires.
Descripción6 páginas, 5 figuras.
Versión del editorhttp://dx.doi.org/10.1088/0957-4484/18/3/035604
URIhttp://hdl.handle.net/10261/14925
DOI10.1088/0957-4484/18/3/035604
ISSN0957-4484
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