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Contact-free mapping of electronic transport phenomena of polar domains in SrMnO3 films

AutorSchaab, J.; Maurel, Laura; Langenberg, Eric; Algarabel, Pedro A. ; Pardo, J. A.; Meier, D.
Fecha de publicación2016
EditorAmerican Physical Society
CitaciónPhysical Review Applied 5(5): 054009 (2016)
ResumenHigh-resolution mapping of electronic transport phenomena plays an increasingly important role for the characterization of ferroic domains and their functionality. At present, spatially resolved electronic transport data are commonly gained from local two-point measurements, collected in line-by-line scans with a conducting nanosized probe. Here, we introduce an innovative experimental approach based on low-energy electron microscopy. As a model case, we study polar domains of varying conductance in strained SrMnO3. By a direct comparison with conductive atomic force and electrostatic force microscopy, we reveal that the applied low-energy electron-microscopy experiment can be considered as an inverse I(V) measurement, providing access to the local electronic conductance with nanoscale resolution and short data-acquisition times in the order of 10-102 ms. Low-energy electrons thus hold yet unexplored application opportunities as a minimal-invasive probe for local electronic transport phenomena, opening a promising route towards spatially resolved, high-throughput sampling at the nanoscale.
DescripciónUnder the terms of the Creative Commons Attribution license.-- et al.
Versión del editorhttp://dx.doi.org/10.1103/PhysRevApplied.5.054009
URIhttp://hdl.handle.net/10261/148540
DOI10.1103/PhysRevApplied.5.054009
Identificadoresdoi: 10.1103/PhysRevApplied.5.054009
e-issn: 2331-7019
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