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Título

Design optimization of pixel sensors using device simulations for the phase-II CMS tracker upgrade

AutorJain, G.; Fernández, M. ; Palomo, Francisco Rogelio; Vila, Iván ; Hidalgo, Salvador
Palabras claveSilicon sensor
CMS
Tracker detector
High energy physics
Fecha de publicación2016
EditorElsevier
CitaciónNuclear Instruments and Methods in Physics Research - Section A 824: 413-416 (2016)
ResumenIn order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters. The effect of various design parameters like pixel size, pixel depth, implant width, metal overhang, p-stop concentration, p-stop depth and bulk doping density on the leakage current and critical electric field are studied for both non-irradiated as well as irradiated pixel sensors. These 2D simulation results of planar pixels are useful for providing insight into the behaviour of non-irradiated and irradiated silicon pixel sensors and further work on 3D simulation is underway.
DescripciónFrontier Detectors for Frontier Physics: Proceedings of the 13th Pisa Meeting on Advanced Detectors.-- On behalf of the CMS Collaboration: et al.
URIhttp://hdl.handle.net/10261/140477
DOI10.1016/j.nima.2015.08.053
Identificadoresdoi: 10.1016/j.nima.2015.08.053
issn: 0168-9002
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