Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process

Abstract

High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ωcenterdotcm were irradiated with neutrons up to a fluence of 2 × 1016 neq/cm2 and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7 × 1015 neq/cm2 to decrease to the level of the unirradiated detector after 2 × 1016 neq/cm2.