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Título

Intrinsic surface band bending in Cu3 N (100) ultrathin films

AutorNavío, C.; Capitán, M. J. ; Álvarez, J.; Yndurain, F.; Miranda, R.
Fecha de publicación6-ago-2007
EditorAmerican Physical Society
CitaciónPhysical Review B - Condensed Matter and Materials Physics 76: 085105 (2007)
ResumenHighly homogeneous, ultrathin films of copper nitride (Cu3 N) have been grown on Fe(001) at room temperature using a Cu evaporator and a radio-frequency plasma source to obtain atomic nitrogen in a UHV environment. Cu3 N is a semiconductor with the valence band edge at -0.65±0.05 eV below the Fermi Level. The formation of copper nitride can be detected spectroscopically by the shape of the Cu LVV-Auger electron transition, which changes sensibly in shape and position compared to metallic Cu. Cu3 N grows epitaxially with the substrate forming flat disklike mosaic blocks, (001) oriented. Both x-ray core level photoelectron spectroscopy and ultraviolet photoelectron spectroscopy photoemission experiments have been used to study the electronic structure. A first-principles calculation has been performed and compared with the measured spectra. © 2007 The American Physical Society.
Descripción8 págs.; 11 figs.; 1 tab. ; PACS number s : 68.55. a, 73.20.At, 61.10. i
Versión del editorhttp://dx.doi.org/10.1103/PhysRevB.76.085105
URIhttp://hdl.handle.net/10261/140324
DOI10.1103/PhysRevB.76.085105
Identificadoresdoi: 10.1103/PhysRevB.76.085105
issn: 1098-0121
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