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dc.contributor.authorKlanner, R.-
dc.contributor.authorJaramillo, R.-
dc.contributor.authorFernández, M.-
dc.contributor.authorGómez, G.-
dc.contributor.authorMoya, David-
dc.contributor.authorGonzález Sánchez, J.-
dc.contributor.authorVila, Iván-
dc.contributor.authorLópez Virto, A.-
dc.contributor.authorCMS Collaboration-
dc.identifierdoi: 10.1016/j.nima.2015.08.026-
dc.identifierissn: 0168-9002-
dc.identifier.citationNuclear Instruments and Methods in Physics Research - Section A 803: 100-112 (2015)-
dc.descriptionUnder a Creative Commons license.-
dc.descriptionThe Tracker Group of the CMS Collaboration.-- et al.-
dc.description.abstractThe response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the 90Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy(SiO2)/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO2 by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n+p strip sensors is discussed.-
dc.description.sponsorshipThe research leading to these results has received funding from the European Commission under the FP7 Research Infrastructures project AIDA, grant agreement no. 262025. We are also grateful to the HGF Alliance Physics at the Terascale, which has partially funded the setup used for the measurements, and to the BMBF, the Ministry of Research and Education of the German Federal Republic, for funding the Ph.D. position of J. Erfle within the Forschungsschwerpunkt FSP-102, Elementarteilchenphysik mit dem CMS-Experiment.-
dc.description.sponsorshipOpen Access funded by CERN.-
dc.relation.isversionofPublisher's version-
dc.subjectSurface damage-
dc.subjectSilicon strip sensors-
dc.subjectRadiation damage-
dc.subjectCharge collection-
dc.titleImpact of low-dose electron irradiation on n+p silicon strip sensors-
dc.description.versionPeer Reviewed-
dc.contributor.funderEuropean Commission-
dc.contributor.funderFederal Ministry of Education and Research (Germany)-
dc.contributor.funderEuropean Organization for Nuclear Research-
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