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dc.contributor.authorPrieto, P.-
dc.contributor.authorde la Figuera, Juan-
dc.contributor.authorMartín-García, L.-
dc.contributor.authorPrieto, J. E.-
dc.contributor.authorMarco, J.F.-
dc.date.accessioned2016-11-03T13:00:34Z-
dc.date.available2016-11-03T13:00:34Z-
dc.date.issued2016-
dc.identifierdoi: 10.1039/c6tc02152b-
dc.identifierissn: 2050-7526-
dc.identifier.citationJournal of Materials Chemistry C 4: 7632- 7639 (2016)-
dc.identifier.urihttp://hdl.handle.net/10261/139813-
dc.description.abstractHighly oriented magnetite thin films showing well-defined fourfold in-plane magnetic anisotropy have been grown on TiN buffered Si(001) substrates by ion beam sputtering assisted by a second ion beam containing a controlled mixture of Ar and O ions. The structure and composition of stoichiometric FeO and non-stoichiometric FeO magnetite thin films have been characterized by X-ray diffraction, Rutherford backscattering spectroscopy and Mössbauer spectroscopy. Magneto-optical Kerr effect measurements show that the maxima of the remanence and coercivity of all these films lie along the Si[010] and [100] directions. The introduction of Fe vacancies in magnetite does not alter the well-defined fourfold in-plane anisotropy but induces a decrease of the coercive field as the number of vacancies increases. Furthermore, the results indicate that a 5 nm TiN thick buffer layer is enough to maintain the FeO[100]/TiN[100]/Si[100] epitaxial relationship.-
dc.rightsclosedAccess-
dc.titleFourfold in-plane magnetic anisotropy of magnetite thin films grown on TiN buffered Si(001) by ion-assisted sputtering-
dc.typeartículo-
dc.identifier.doi10.1039/c6tc02152b-
dc.date.updated2016-11-03T13:00:34Z-
dc.description.versionPeer Reviewed-
dc.language.rfc3066eng-
dc.relation.csic-
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