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Strain-Driven Orbital and Magnetic Orders and Phase Separation in Epitaxial Half-Doped Manganite Films for Tunneling Devices

AutorPesquera, David ; Gutiérrez Yatacue, Diego F. ; Radaelli, Greta; Herranz, Gervasi ; Sánchez Barrera, Florencio ; Fontcuberta, Josep
Palabras claveElectronics
Materials Science
Fecha de publicación12-sep-2016
EditorAmerican Physical Society
CitaciónPhysical Review Applied 6(3): 034004 (2016)
ResumenMixed-valence manganites La1−xAxMnO3 (A=Sr, Ca) with x≈0.5 can be driven from a ferromagnetic-metallic to an antiferromagnetic-insulating state by a small modification (Δx) of the carrier density (Δx/x<1). For this reason, these oxides have received renewed attention due to their potentially advantageous integration in ferroelectric tunnel junctions of adjustable tunnel barrier width. Interestingly, in thin films, epitaxial strain can modify the electronic and magnetic ground state strongly affecting their magnetotransport properties. Here we exploit the extreme sensitivity of linearly and circularly polarized x-ray absorption to orbital anisotropy and magnetic ordering to explore the role of structural distortions and electronic bandwidth on the orbital occupancy and spin ordering of Mn 3d states in La0.5A0.5MnO3 films under various strain states. Mn55 NMR experiments are used to get information about the electronic and magnetic phase separation and orbital ordering occurring in these films. These results combined with the corresponding structural, magnetic, and electrical characterization allow us to map the strain-dependent orbital and magnetic phase diagrams of half-doped manganites and its dependence on the electronic bandwidth.
Versión del editorhttp://dx.doi.org/10.1103/PhysRevApplied.6.034004
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