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dc.contributor.authorSilva-Guillén, José Ángeles_ES
dc.contributor.authorOrdejón, Pabloes_ES
dc.contributor.authorGuinea, F.es_ES
dc.contributor.authorCanadell, Enrices_ES
dc.date.accessioned2016-10-03T11:38:01Z-
dc.date.available2016-10-03T11:38:01Z-
dc.date.issued2016-09-16-
dc.identifier.citation2D Materials 3(3): 035028 (2016)es_ES
dc.identifier.issn2053-1583-
dc.identifier.urihttp://hdl.handle.net/10261/137593-
dc.description.abstractAdensity functional theory study of NbSe2 single-layers in the normal non-modulated and the 3×3 CDWstates is reported.Weshow that, in the single layer, theCDWbarely affects the Fermi surface of the system, thus ruling out a nesting mechanism as the driving force for the modulation. TheCDW stabilizes levels lying around 1.35 eV below the Fermi level within the Se-based valence band but having a substantial Nb–Nb bonding character. The absence of interlayer interactions leads to the suppression of the pancake-like portion of the bulk Fermi surface in the single-layer.Weperform scanning tunneling microscopy simulations and find that the images noticeably change with the sign and magnitude of the voltage bias. The atomic corrugation of the Se sublayer induced by the modulation plays a primary role in leading to these images, but the electronic reorganization also has an important contribution. The analysis of the variation of these images with the bias voltage does not support a Fermi surface nesting mechanism for theCDW. It is also shown that underlying graphene layers (present in some of the recent experimental work) do not modify the conduction band, but do affect the shape of the valence band of NbSe2 single-layers. The relevance of these results in understanding recent physical measurements for NbSe2 single-layers is discussed. Introduction Transition metal dichalcogenides are layered materials, easily exfoliable due to the van der Waals forces linking their layers. They have been the focus of large attention in the past few years because they are ideal systems where to study the influence of the reduced electronic screening brought about by lowering the dimensionality from bulk to layers of different thickness. Among them, 2H-NbSe2 (from now on we will refer to it just as NbSe2) is metallic at room temperature, becomes superconducting (SC) at around 7 K [1, 2] and there are strong indications that it is a twogap superconductor [3–7]. Before reaching the SC state it undergoes a charge density wave (CDW) distortion at around 30 K [8, 9]. The bulk structure of NbSe2 is built from hexagonal layers containing Nb atoms in a trigonal prismatic coordination (see figure 1(a)) [10], but there are also relatively short interlayer Se–Se contacts providing a substantial interlayer coupling. Althoughes_ES
dc.description.sponsorshipThis work has received funding from the European Union's Seventh Framework Programme (FP7/2007-2013) through the ERC Advanced Grant NOVGRAPHENE (GA 290846). Work in Bellaterra was supported by Spanish MINECO (Grant Nos. FIS2015-64886-C5-3-P and FIS2015-64886-C5-4-P, and the Severo Ochoa Centers of Excellence Program under Grants SEV-2013-0295 and SEV-2015-0496), and Generalitat de Catalunya (2014SGR301). We thank M. Ugeda for fruitful discussions.es_ES
dc.language.isoenges_ES
dc.publisherInstitute of Physics Publishinges_ES
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/290846es_ES
dc.relationinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2015-64886-C5-3-P-
dc.relationinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2015-64886-C5-4-P-
dc.relationinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2013-0295-
dc.relationinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496-
dc.relation.isversionofPublisher's versiones_ES
dc.rightsopenAccesses_ES
dc.subjectCharge density waveses_ES
dc.subjectTransition metal dichalcogenideses_ES
dc.subjectSingle-layeres_ES
dc.subjectDensity functional theoryes_ES
dc.titleElectronic structure of 2H-NbSe2 single-layers in the CDW statees_ES
dc.typeartículoes_ES
dc.identifier.doi10.1088/2053-1583/3/3/035028-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1088/2053-1583/3/3/035028es_ES
dc.rights.licensehttps://creativecommons.org/licenses/by/3.0/es_ES
dc.contributor.funderEuropean Research Counciles_ES
dc.contributor.funderMinisterio de Economía y Competitividad (España)es_ES
dc.contributor.funderGeneralitat de Catalunyaes_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000781es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002809es_ES
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.grantfulltextopen-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.fulltextWith Fulltext-
item.openairetypeartículo-
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