English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/13712
Compartir / Impacto:
Estadísticas
Add this article to your Mendeley library MendeleyBASE
Citado 3 veces en Web of Knowledge®  |  Ver citas en Google académico
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Título

Role of volume versus defects in the electrical resistivity of lattice-distorted V(001) ultrathin films

AutorHuttel, Yves ; Cerdá, J. I.; Martínez, J. L. ; Cebollada, Alfonso
Palabras claveAb initio calculations
Ballistic transport
Chemical interdiffusion
Electrical resistivity
Interface structure
Metal-insulator boundaries
Metallic epitaxial layers
Sputter deposition
Vanadium
Fecha de publicación30-nov-2007
EditorAmerican Physical Society
CitaciónPhysical Review B 76, 195451 (2007)
Resumen4 nm thick V layers grown by triode sputtering on MgO(001) single crystals and capped with MgO exhibit a perfect epitaxy accompanied by a tetragonal distortion and an unexpected volume compression that increases with the V deposition temperature. The electrical resistivity follows a deposition temperature dependence with these structural modifications, decreasing by an order of magnitude across the temperature range studied. Total energy ab initio calculations rule out electronic structure changes and/or oxygen interface diffusion as responsible for the structure variation. Calculations of the ballistic conductance for the epitaxial V films do not reproduce the resistivity-volume correlation, implying a diffusive electron transport mechanism in the films, despite their high crystallinity. Instead, we assign the origin of the electrical behavior to the presence of growth induced defects in the V lattice, whose density is higher in films deposited at low temperature, and decreases as deposition temperature increases. These results extend the previous findings in volume expanded H loaded Fe/V and Mo/V superlattices to simpler structures where the H content is negligible and, additionaly, all the electronic transport is confined within the V film.
Versión del editorhttp://link.aps.org
http://dx.doi.org/10.1103/PhysRevB.76.195451
URIhttp://hdl.handle.net/10261/13712
DOI10.1103/PhysRevB.76.195451
ISSN1098-0121
Aparece en las colecciones: (IMN-CNM) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
Huttel, Y. et al Phys.Rev.B_76_2007.pdf332,61 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 



NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.