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Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4

AuthorsNiesner, D.; Fauster, Th.; Menshchikova, Tatiana V.; Eremeev, S. V.; Aliev, Ziya S.; Echenique, Pedro M. ; Chulkov, Eugene V.
Issue Date2014
PublisherAmerican Physical Society
CitationPhysical Review B 89(8): 081404(R) (2014)
AbstractTime-resolved two-photon photoemission was used to study the electronic structure and dynamics at the surface of SnSb2Te4, a p-type topological insulator. The Dirac point is found 0.32±0.03 eV above the Fermi level. Electrons from the conduction band minimum are scattered on a time scale of 43±4 fs to the Dirac cone. From there they decay to the partly depleted valence band with a time constant of 78±5 fs. The significant interaction of the Dirac states with bulk bands is attributed to their bulk penetration depth of ∼3 nm as found from density functional theory calculations.
DescriptionUnder the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.
Publisher version (URL)http://dx.doi.org/10.1103/PhysRevB.89.081404
Identifiersdoi: 10.1103/PhysRevB.89.081404
issn: 2469-9950
e-issn: 2469-9969
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