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Título: | Indentation fracture toughness of single-crystal Bi2Te3 topological insulators |
Autor: | Lamuta, Caterina; Politano, A.; Aliev, Ziya S.; Chulkov, Eugene V. CSIC ORCID | Palabras clave: | Bismuth telluride Topological insulators Nanoindentation Fracture toughness |
Fecha de publicación: | 2016 | Editor: | Tsinghua University Press Springer Nature |
Citación: | Nano Research 9(4): 1032-1042 (2016) | Resumen: | Bismuth telluride (BiTe) is one of the most important commercial thermoelectric materials. In recent years, the discovery of topologically protected surface states in Bi chalcogenides has paved the way for their application in nanoelectronics. Determination of the fracture toughness plays a crucial role for the potential application of topological insulators in flexible electronics and nanoelectromechanical devices. Using depth-sensing nanoindentation tests, we investigated for the first time the fracture toughness of bulk single crystals of BiTetopological insulators, grown using the Bridgman-Stockbarger method. Our results highlight one of the possible pitfalls of the technology based on topological insulators. | URI: | http://hdl.handle.net/10261/136797 | DOI: | 10.1007/s12274-016-0995-z | Identificadores: | doi: 10.1007/s12274-016-0995-z e-issn: 1998-0000 issn: 1998-0124 |
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