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Spin seebeck thermoelectric device and its uses

AuthorsMorellón, Luis; Algarabel, Pedro A. ; Adachi, Hiroto
Issue Date6-May-2016
CitationWO2016066216 A1
AbstractThe present invention relates to a thermoelectric device which comprises: a layer of a non-magnetic material (NM) disposed over a layer of a magnetic material (F), wherein said layers form a first bi-layer junction (NM1/F1) of materials having spin Seebeck effect properties; and at least one second bi-layer junction of non-magnetic and magnetic materials (NM2/F2) having spin current transmission properties; wherein the second bi-layer junction (NM2/F2) is arranged to form, together with the first bi-layer junction (NM1/F1), a multilayer structure of materials having an amplified spin Seebeck effect compared to that of the first bi-layer junction (NM1/F1) alone. An optimized device can be obtained by stacking sequences of these bi-layers in a multilayered structure n×(NM/F). The invention provides improved spin Seebeck thermoelectric devices, through a novel arrangement of materials which provide a substantial amplification of the spin pumped currents within the multilayer structure, thus generating enhanced voltage signals compared to those present in the prior art.
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