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Interface induced states at the boundary between a 3D topological insulator Bi2Se3 and a ferromagnetic insulator EuS

AutorEremeev, S. V.; Men'shov, V. N.; Tugushev, V. V.; Chulkov, Eugene V.
Palabras claveMagnetic proximity effect
Topological insulator
Fecha de publicación2015
EditorElsevier
CitaciónJournal of Magnetism and Magnetic Materials 383: 30-33 (2015)
ResumenBy means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi2Se3 thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the Bi2Se3/EuS heterostructure, the gap opened in the spectrum of the topological state has a hybridization character and is shown to be controlled by the Bi2Se3 film thickness, while magnetic contribution to the gap is negligibly small. We also analyzed the effect of Eu doping on the magnetization of the Bi2Se3 film and demonstrated that the Eu impurity induces magnetic moments on neighboring Se and Bi atoms an order of magnitude larger than the substrate-induced moments. Recent magnetic and magneto-transport measurements in EuS/Bi2Se3 heterostructure are discussed.
URIhttp://hdl.handle.net/10261/136489
DOI10.1016/j.jmmm.2014.09.029
Identificadoresdoi: 10.1016/j.jmmm.2014.09.029
issn: 0304-8853
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