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Electronic and spin structure of a family of Sn-based ternary topological insulators

AutorVergniory, M.; Menshchikova, T. V.; Silkin, I. V.; Koroteev, Yuri M.; Eremeev, S. V.; Chulkov, Eugene V.
Fecha de publicación2015
EditorAmerican Physical Society
CitaciónPhysical Review B 92(4): 045134 (2015)
ResumenWe report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.
DescripciónUnder the terms of the Creative Commons Attribution License 3.0 (CC-BY).
Versión del editorhttp://dx.doi.org/10.1103/PhysRevB.92.045134
Identificadoresdoi: 10.1103/PhysRevB.92.045134
issn: 2469-9950
e-issn: 2469-9969
Aparece en las colecciones: (CFM) Artículos
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