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dc.contributor.authorMen'shov, V. N.-
dc.contributor.authorTugushev, V. V.-
dc.contributor.authorEremeev, S. V.-
dc.contributor.authorEchenique, Pedro M.-
dc.contributor.authorChulkov, Eugene V.-
dc.date.accessioned2016-09-05T09:47:10Z-
dc.date.available2016-09-05T09:47:10Z-
dc.date.issued2015-
dc.identifierdoi: 10.1103/PhysRevB.91.075307-
dc.identifierissn: 2469-9950-
dc.identifiere-issn: 2469-9969-
dc.identifier.citationPhysical Review B 91(7): 075307 (2015)-
dc.identifier.urihttp://hdl.handle.net/10261/136310-
dc.descriptionUnder the terms of the Creative Commons Attribution License 3.0 (CC-BY).-
dc.description.abstractIn the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically describe the formation of interfacial bound electron states of two types (ordinary and topological) having different spatial distributions and energy spectra. We show that these states appear as a result of the interplay of two factors: hybridization and band bending of the TI and NI electron states near the TI/NI boundary. These results are corroborated by the density functional theory calculations for the exemplar Bi2Se3/ZnSe system.-
dc.description.sponsorshipWe acknowledge partial support from the Basque Country Government, Departamento de Educacion, Universidades e Investigacion (Grant No. IT-366-07), the Spanish Ministerio de Ciencia e Innovacion (Grant No. FIS2010-19609-C02-00), the Ministry of Education and Science of Russian Federation (Grant No. 2.8575.2013), Russian Foundation for Basic Researches (Grants No. 13-02-00016 and No. 13-02-12110-ofi-m), and Saint Petersburg State University (Project 11.50.202.2015).-
dc.publisherAmerican Physical Society-
dc.relation.isversionofPublisher's version-
dc.rightsopenAccess-
dc.titleBand bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator-
dc.typeartículo-
dc.identifier.doi10.1103/PhysRevB.91.075307-
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevB.91.075307-
dc.date.updated2016-09-05T09:47:10Z-
dc.description.versionPeer Reviewed-
dc.language.rfc3066eng-
dc.rights.licensehttp://creativecommons.org/licenses/by/3.0/-
dc.contributor.funderSaint Petersburg State University-
dc.contributor.funderRussian Foundation for Basic Research-
dc.contributor.funderMinistry of Education and Science of the Russian Federation-
dc.contributor.funderMinisterio de Ciencia e Innovación (España)-
dc.contributor.funderEusko Jaurlaritza-
dc.relation.csic-
dc.identifier.funderhttp://dx.doi.org/10.13039/501100004285es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002261es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003443es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100004837es_ES
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