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Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator

AutorMen'shov, V. N.; Tugushev, V. V.; Eremeev, S. V.; Echenique, Pedro M. ; Chulkov, Eugene V.
Fecha de publicación2015
EditorAmerican Physical Society
CitaciónPhysical Review B 91(7): 075307 (2015)
ResumenIn the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically describe the formation of interfacial bound electron states of two types (ordinary and topological) having different spatial distributions and energy spectra. We show that these states appear as a result of the interplay of two factors: hybridization and band bending of the TI and NI electron states near the TI/NI boundary. These results are corroborated by the density functional theory calculations for the exemplar Bi2Se3/ZnSe system.
DescripciónUnder the terms of the Creative Commons Attribution License 3.0 (CC-BY).
Versión del editorhttp://dx.doi.org/10.1103/PhysRevB.91.075307
URIhttp://hdl.handle.net/10261/136310
DOI10.1103/PhysRevB.91.075307
Identificadoresdoi: 10.1103/PhysRevB.91.075307
issn: 2469-9950
e-issn: 2469-9969
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