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Interface characterization of highly conductive Ga-doped ZnO thin films deposited onto Si wafers

AutorGabàs, Mercedes; Costa Krämer, José Luis ; Landa Cánovas, Ángel ; Herrero, Pilar ; Agulló Rueda, F. ; Díaz-Carrasco, P.; Ramos-Barrado, J. Ramón
Fecha de publicaciónoct-2012
Citación4th International Symposium on Transparent Conductive Materials (2012)
ResumenThe suitability of Ga:ZnO as a transparent and conductive material has been assessed in this work. To this end, the properties of ZnO and Ga:ZnO thin films deposited by RF magnetron sputtering onto Si wafer substrates have been evaluated and compared using a wide variety of experimental techniques such as transmission electron microscopy (TEM), optical ellipsometry, secondary neutral mass spectrometry (SNMS), and X-ray and ultraviolet photoemission spectroscopies (XPS, UPS). The electrical and optical properties of Ga:ZnO films have been proved to improve with respect to their respective undoped counterparts. The doped film achieved a resistivity ~9×10-4 ohms·cm with a carrier density ~5×1020. Our results illustrate a well defined interface between the Ga-doped film and the Si substrate with a band structure bending which smoothly adapts to the valence bands of both Ga:ZnO and Si. Thus, Ga doped ZnO films (1% at.) stand out as very promising candidates with application as transparent conductive oxides in Si solar cell fabrication.
DescripciónComunicación presentada en el 4th International Symposium on Transparent Conductive Materials (TCM 2012), celebrado en Creta del 21 al 26 de octubre de 2012.
Gabàs, Mercedes et al.
URIhttp://hdl.handle.net/10261/135253
Aparece en las colecciones: (IMN-CNM) Comunicaciones congresos
(ICMM) Comunicaciones congresos
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