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Título

Droplet epitaxy for III-V semiconductor nanostructures

AutorGonzález Sotos, Luisa
Fecha de publicaciónsep-2015
CitaciónVIII International Conference on Surfaces Materials and Vacuum (2015)
ResumenThe droplet epitaxy growth technique was ¿rstly used at the beginning of the 1990s by Koguchi et al.[1]. It was proposed as a development of the molecular beam epitaxy (MBE) for the fabrication of III¿V semiconductor nanostructures on II¿VI semiconductor substrates with nearly equal lattice constant. It basically consists of the deposition of atoms of group-III element in absence of any supply of group-V element, creating liquid metal droplets on the substrate. These metal droplets are, right afterwards, exposed to an atmosphere of group-V element, which induces their crystallization into III¿V nanostructures. This technology permits to obtain quantum nanostructures on heteroepitaxial systems with or without lattice mismatch, representing an actual advantage over well-established Stranski-Krastanow processes where the strain is the driving force for nanostructures formation. Depending on the substrate temperature, this growth method yields different types of nanostructures. For example, on GaAs (001) substrates, quantum dots (QD) [2] and quantum rings (QR) complexes [3] are formed at relatively low temperatures of 200¿300 C, whereas nanoholes surrounded by mounds [4, 5] are obtained at high substrate temperatures (¿500C). In particular these nanoholes can be used as a template to obtain both strained and strain-free QD by filling them with a semiconductor with a smaller band-gap than that of the host matrix [5]. Within this approach, the size and shape of the resulting nanostructures can be modified independently of the areal density. The simultaneous control of QD density and emission wavelength is crucial for applications as single photon emitter devices. In this paper, the potential of droplet epitaxy for nanostructures formation will be described, with emphasis on the mechanisms of nanoholes formation, mandatory in order to take advantage of all the potential of droplet epitaxy as a nano-patterning technique [6]. References [1] N. Koguchi et al., J. Cryst. Growth 111, 688¿692 (1991) [2] J.S. Kim, et al., Appl. Phys. Lett. 85, 5893¿5895 (2004) [3] T. Mano, et al., Nano Lett. 5, 425¿428 (2005) [4] Z.M. Wang, et al., Appl. Phys. Lett. 90, 113120 (2007) [5] P. Alonso-González, et al., Appl. Phys. Lett. 91, 163104, (2007) [6] Fuster, D. et al., Nan. Res. Lett 9, 309 (2014)
DescripciónConferencia presentada en la VIII International Conference on Surfaces Materials and Vacuum (de la Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A. C.), celebrado en Puebla (México) del 21 al 25 de septiembre de 2015.
URIhttp://hdl.handle.net/10261/135137
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