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dc.contributor.authorPérez Taborda, Jaime Andrés-
dc.contributor.authorRomero Fanego, Juan José-
dc.contributor.authorMartín-González, Marisol-
dc.date.accessioned2016-07-28T10:03:02Z-
dc.date.available2016-07-28T10:03:02Z-
dc.date.issued2013-06-
dc.identifier.citation4th International Conference on Fundamentals and Applications of HIPIMS and Final Event of COST Action MP0804 (2013)-
dc.identifier.urihttp://hdl.handle.net/10261/135107-
dc.descriptionPóster presentado en la 4th International Conference on Fundamentals and Applications of HIPIMS and Final Event of COST Action MP0804, celebrada en Braunschweig (Alemania) el 12 y 13 de junio de 2013.-
dc.description.abstractAlN thin films obtained from an Al target in an atmosphere of N2 by PLD. Substrate temperature was varied. The films deposited at temperatures over 300ºC present the desired composition. The acoustic wave velocity on SAW systems increases as the substrate temperature increases.-
dc.rightsopenAccess-
dc.titleAluminium nitride thin films for saw devices deposited by pulsed laser deposition-
dc.typepóster de congreso-
dc.date.updated2016-07-28T10:03:02Z-
dc.description.versionPeer Reviewed-
dc.language.rfc3066eng-
dc.relation.csic-
Appears in Collections:(IMN-CNM) Comunicaciones congresos
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