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Título

Thermal rectification in silicon by a graded distribution of defects

AutorDettori, Riccardo; Melis, Claudio; Rurali, Riccardo ; Colombo, Luciano
Palabras claveRectification
Germanium
Thermal conductivity
Elemental semiconductors
Interface structure
Fecha de publicación7-jun-2016
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 119(21): 215102 (2016)
ResumenWe discuss about computer experiments based on nonequilibrium molecular dynamics simulations providing evidence that thermal rectification can be obtained in bulk Si by a non-uniform distribution of defects. We consider a graded population of both Ge substitutional defects and nanovoids, distributed along the direction of an applied thermal bias, and predict a rectification factor comparable to what is observed in other low–dimensional Si–based nanostructures. By considering several defect distribution profiles, thermal bias conditions, and sample sizes, the present results suggest that a possible way for tuning the thermal rectification is by defect engineering.
Versión del editorhttp://dx.doi.org/10.1063/1.4953142
URIhttp://hdl.handle.net/10261/135080
DOI10.1063/1.4953142
ISSN0021-8979
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