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Erbium in crystal silicon: Optical activation, excitation, and concentration limits

AutorPolman, A.; Van Den Hoven, G.N.; Custer, J.S.; Shin, J.H.; Serna, Rosalía ; Alkemade, P.F.A.
Fecha de publicación1-feb-1995
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 77: 1256- 1262-1262 (1995)
ResumenThe optical activation, excitation, and concentration limits of erbium in crystal Si are studied. Preamorphized surface layers of Czochralski-grown (Cz) Si(100), containing 1.7×1018 O/cm3, were implanted with 250 keV Er at fluences in the range 8×1011-8×10 14 cm-2. After thermal solid-phase epitaxy of the Er-doped amorphous layers at 600°C, Er is trapped in the crystal at concentrations ranging from 3×1016 to 7×1019 Er/cm 3, as measured by secondary-ion-mass spectrometry. Photoluminescence spectra taken at 77 K show the characteristic Er3+ intra-4f luminescence at 1.54 ¿m. Photoluminescence excitation spectroscopy shows that Er is excited through a photocarrier-mediated process. Rapid thermal annealing at 1000°C for 15 s increases the luminescence intensity, mainly due to an increase in minority-carrier lifetime, which enhances the excitation efficiency. Luminescent Er forms clusters with oxygen: the maximum Er concentration that can be optically activated is determined by the O content, and is (3±1)×1017 Er/cm3 in Cz-Si. The internal quantum efficiency for electrical excitation of Er in Cz-Si is larger than 3×10-6. © 1995 American Institute of Physics.
Descripción7 pags.; 7 figs.
Versión del editorhttp://dx.doi.org/10.1063/1.358927
URIhttp://hdl.handle.net/10261/134549
DOI10.1063/1.358927
Identificadoresdoi: 10.1063/1.358927
issn: 0021-8979
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