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High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

AutorUlloa, J. M.; Llorens Montolio, José Manuel ; Alén, Benito ; Reyes, D. F.; Sales, David L.; González, David; Hierro, Adrián
Fecha de publicación2012
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 101: 253112 (2012)
ResumenThe photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∿20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition. © 2012 American Institute of Physics.
Versión del editorhttp://dx.doi.org/10.1063/1.4773008
Identificadoresissn: 0003-6951
e-issn: 1077-3118
Aparece en las colecciones: (IMN-CNM) Artículos
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