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Femtosecond laser deposition of TiO2 by laser induced forward transfer

AuthorsSanz, M. ; Walczak, M.; Oujja, M. ; Domingo, Concepción ; Klini, A.; Papadopoulou, E.L.; Fotakis, C.; Castillejo, Marta
Issue Date2010
CitationThin Solid Films 518: 5525- 5529 (2010)
AbstractFemtosecond lasers have been used for laser induced forward transfer (LIFT) of TiO2, a wide-band semiconductor with many industrial and research applications. TiO2 polycrystalline thin films on quartz (obtained by pulsed laser deposition) were used as donors and both quartz and fluorine-doped tin dioxide coated glass substrates as acceptors. LIFT was performed at the laser wavelengths of 248 and 800 nm with pulses of 450 and 300 fs respectively. The transferred material was characterized by energy-dispersive X-ray spectroscopy, X-ray diffraction and micro-Raman spectroscopy to determine the composition and crystalline quality, and by scanning electron microscopy and atomic force microscopy to assess the surface morphology. The relation between these properties and the laser transfer conditions, including wavelength, pulse energy and acceptor substrate, are presented. © 2010 Elsevier B.V.
Identifiersissn: 0040-6090
Appears in Collections:(IQFR) Artículos
(CFMAC-IEM) Artículos
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