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Growth of ferroelectric Ba0.8Sr0.2TiO3 epitaxial films by UV pulsed laser irradiation of chemical solution derived precursor layers

AutorQueraltó, Albert; Pérez del Pino, A.; Mata, M. de la; Arbiol, Jordi; Tristany, Mar; Gómez Rodríguez, Andrés; Obradors Berenguer, Xavier; Puig Molina, Teresa
Palabras claveThin film structure
Laser beam effects
Ferroelectric thin films
Chemical bonds
Fecha de publicación29-jun-2015
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 106(26): 262903 (2015)
Resumen© 2015 AIP Publishing LLC. Highly crystalline epitaxial Ba<inf>0.8</inf>Sr<inf>0.2</inf>TiO<inf>3</inf> (BST) thin-films are grown on (001)-oriented LaNiO<inf>3</inf>-buffered LaAlO<inf>3</inf> substrates by pulsed laser irradiation of solution derived barium-zirconium-titanium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The structural analyses of the obtained films, studied by X-ray diffractometry and transmission electron microscopy, demonstrate that laser processing allows the growth of tens of nm-thick BST epitaxial films with crystalline structure similar to that of films obtained through conventional thermal annealing methods. However, the fast pulsed nature of the laser employed leads to crystallization kinetic evolution orders of magnitude faster than in thermal treatments. The combination of specific photothermal and photochemical mechanisms is the main responsible for the ultrafast epitaxial laser-induced crystallization. Piezoresponse microscopy measurements demonstrate equivalent ferroelectric behavior in laser and thermally annealed films, being the piezoelectric constant ∼25 pm V<sup>-1</sup>.
Identificadoresdoi: http://dx.doi.org/10.1063/1.4923376
issn: 0003-6951
e-issn: 1077-3118
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