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Título

Nanotexturing to enhance photoluminescent response of atomically thin indium selenide with highly tunable band gap

AutorBrotons-Gisbert, Mauro; Hidalgo, Francisco; Tobias, Gerard; Canadell, Enric; Ordejón, Pablo ; Martínez-Pastor, Juan; Sánchez-Royo, Juan F.
Palabras claveTwo-dimensional materials
Indium selenide
Microphotoluminescence
Optical properties
Band gap engineering
Nanotexturing
Fecha de publicación15-abr-2016
EditorAmerican Chemical Society
CitaciónNano Letters 16(5): 3221–3229 (2016)
ResumenManipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. Two-dimensional semiconductors have revealed promising perspectives in nanotechnology. However, the tunability of their physical properties is challenging for semiconductors studied until now. Here we show the ability of morphological manipulation strategies, such as nanotexturing or, at the limit, important surface roughness, to enhance light absorption and the luminescent response of atomically thin indium selenide nanosheets. Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. These results are relevant for the design of new optoelectronic devices, including heterostructures of two-dimensional materials with optimized band gap functionalities and in-plane heterojunctions with minimal junction defect density.
DescripciónBrotons-Gisbert, Mauro et al.
Versión del editorhttp://dx.doi.org/10.1021/acs.nanolett.6b00689
URIhttp://hdl.handle.net/10261/133083
DOI10.1021/acs.nanolett.6b00689
ISSN1530-6984
E-ISSN1530-6992
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