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Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells

AuthorsSilvestre, Santiago; Boronat, Albert ; Colina, Mónica; Castañer, Luis; Olea, Javier; Pastor, David ; Prado, Álvaro del; Mártil, Ignacio; González-Díaz, Germán; Luque López, Antonio; Antolín, Elisa; Hernández, E.; Ramiro, Íñigo; Artacho, Irene; López, Esther; Martí Vega, Antonio
Issue Date22-Nov-2013
PublisherInstitute of Pure and Applied Physics
CitationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 52: 122302 (2013)
AbstractIn this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage. © 2013 The Japan Society of Applied Physics.
Publisher version (URL)http://dx.doi.org/10.7567/JJAP.52.122302
Identifiersissn: 0021-4922
e-issn: 1347-4065
Appears in Collections:(IMN-CNM) Artículos
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