English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/132645
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Electrical contact resistances of thermoelectric thin films measured by Kelvin probe microscopy

AuthorsMuñoz Rojo, Miguel ; Caballero-Calero, Olga ; Martín-González, Marisol
Issue Date2013
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 103: 183905 (2013)
AbstractThis work presents an approach for measuring cross plane electrical contact resistances directly using Kelvin Probe Microscopy. With this technique we were able to measure the electrical contact resistances of a cross section of a thermoelectric thin film made of Bi2Te3 sandwiched between two gold electrodes. On the one hand, the bottom gold electrode, which is located on top of the silicon substrate, was used as a cathode in electro-deposition process to grow the sample. On the other hand, the gold electrode on top was made via physical evaporation. The electrical contact resistances measured at both interfaces were 0.11 ± 0.01 Ω and 0.15 ± 0.01 Ω, respectively. These differences are related to differences between the top and bottom gold/bismuth-telluride film, obtaining smaller contact resistance where the film was grown by electro-deposition. © 2013 AIP Publishing LLC.
Publisher version (URL)http://dx.doi.org/10.1063/1.4826684
URIhttp://hdl.handle.net/10261/132645
DOI10.1063/1.4826684
Identifiersissn: 0003-6951
e-issn: 1077-3118
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
kelvin_probe_microscopy_muñoz.pdf1,22 MBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.