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Counting molecular-beam grown graphene layers

AutorPlaut, Annette S.; Wurstbauer, Ulrich; Pinczuk, Aron; García Martínez, Jorge Manuel ; Pfeiffer, Loren N.
Fecha de publicación2013
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 102: 241905 (2013)
ResumenWe have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh [ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order. © 2013 AIP Publishing LLC.
Versión del editorhttp://dx.doi.org/10.1063/1.4811708
URIhttp://hdl.handle.net/10261/132639
DOI10.1063/1.4811708
Identificadoresissn: 0003-6951
e-issn: 1077-3118
Aparece en las colecciones: (IMN-CNM) Artículos
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