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Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

AutorPérez-Tomás, Amador ; Catalán, Gustau ; Fisher, Craig A.; Cordier, Y.
Palabras claveHomoepitaxial GaN
Nanoscale
HEMT
MBE
High mobility transistor
Fecha de publicación2015
EditorInstitute of Physics Publishing
CitaciónNanotechnology 26(11): 115203 (2015)
ResumenThe gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25–310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor (Ids > 1 A mm−1) to be defined (0.5 A mm−1 at 300 °C). The vertical breakdown voltage has been determined to be ~850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current.
URIhttp://hdl.handle.net/10261/131782
DOI10.1088/0957-4484/26/11/115203
Identificadoresdoi: 10.1088/0957-4484/26/11/115203
issn: 0957-4484
e-issn: 1361-6528
Aparece en las colecciones: (CIN2) Artículos
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