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Title

Electrical properties and strain distribution of Ge suspended structures

AuthorsShah, V. A.; Rhead, S. D.; Reparaz, J. S. CSIC ORCID; Sotomayor Torres, C. M. CSIC ORCID; Leadley, D. R.
KeywordsDislocations
Germanium
Micro-XRD
Epitaxy
Issue Date2015
PublisherElsevier
CitationSolid-State Electronics 108: 13-18 (2015)
AbstractGermanium membranes and microstructures of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray diffraction and micro-Raman spectroscopy. The strain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an RMS roughness below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.
URIhttp://hdl.handle.net/10261/131656
DOIhttp://dx.doi.org/10.1016/j.sse.2014.12.004
Identifiersdoi: 10.1016/j.sse.2014.12.004
issn: 0038-1101
Appears in Collections:(CIN2) Artículos
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