English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/131466
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Growth kinetics engineered magnetoresistance response in La2/3Sr1/3MnO3 thin films

AutorPomar, Alberto ; Santiso, José ; Sandiumenge, Felip ; Roqueta, Jaume ; Bozzo, B.; Balcells, Lluis ; Martínez Perea, Benjamín ; Konstantinović, Z.
Fecha de publicación2014
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 104(15): 152406 (2014)
ResumenA route to engineer the intrinsic colossal magnetoresistance (CMR) response in manganite thin films through an accurate control of the growth kinetics is presented. It is shown that under specific growth conditions, a particular strained state, substantially different from that of bulk-like materials and standard films, can be quenched up to film thicknesses around 60 nm. This strained state exhibits the same structural fingerprints of the interfacial dead layer in standard films and promotes surface morphology instabilities, which end up with the formation of self-organized nanopits array. At the same time, it has profound effects on the intrinsic magnetoelectronic properties of the films that exhibit an enhanced intrinsic CMR response.
DescripciónUnder the terms of the Creative Commons Attribution (CC BY) license to their work.
Versión del editorhttp://dx.doi.org/10.1063/1.4871984
Identificadoresdoi: 10.1063/1.4871984
issn: 0003-6951
e-issn: 1077-3118
Aparece en las colecciones: (CIN2) Artículos
(ICMAB) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
growthkinetics.pdf1,53 MBAdobe PDFVista previa
Mostrar el registro completo

Artículos relacionados:

NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.