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Sub-10 nm resistless nanolithography for directed self-assembly of block copolymers

AuthorsFernández-Regúlez, Marta; Evangelio, Laura; Lorenzoni, Matteo; Fraxedas, J. ; Perez Murano, Francesc X.
KeywordsAtomic force microscopy
Chemical guiding patterns
Block copolymer self-assembly
Issue Date2014
PublisherAmerican Chemical Society
CitationACS Applied Materials and Interfaces 6(23): 21596-21602 (2014)
AbstractThe creation of highly efficient guiding patterns for the directed self-Assembly of block copolymers by resistless nanolithography using atomic force microscopy (AFM) is demonstrated. It is shown that chemical patterns consisting of arrays of lines defined on a brush layer by AFM allow the alignment of the blocks of lamella-forming polymers. The main advantage of this method relies on the capability to create high-resolution (sub-10 nm line-width) guiding patterns and the reduction of the number of process steps compared to the state-of-the-Art methods for creating guiding patterns by chemical surface modification. It is found that the guiding patterns induce the block alignment very efficiently, allowing the achievement of a density multiplication factor of 7 for block copolymers of 14 nm half-pitch, which is attributed to the combined effect of topographical and chemical modification.
Identifiersdoi: 10.1021/am506600m
e-issn: 1944-8252
issn: 1944-8244
Appears in Collections:(IMB-CNM) Artículos
(CIN2) Artículos
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