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Study of Growth Parameters for Single InAs QD Formation on GaAs(001) Patterned Substrates by Local Oxidation Lithography

AutorHerranz Zamorano, Jesús ; González Sotos, Luisa ; Wewior, Lukasz Jakub ; Alén, Benito ; Fuster, David ; González Díez, Yolanda
Fecha de publicación2015
EditorAmerican Chemical Society
CitaciónCrystal Growth and Design 15(2): 666–672 (2015)
ResumenThis work studies the selective nucleation of InAs within nanoholes on GaAs(001) substrates patterned by atomic force microscopy local oxidation. The effects of substrate temperature and As4 overpressure during InAs deposition directly on the patterned substrate (without a GaAs buffer layer) are considered. It is found that when InAs is deposited at substrate temperature of 510 °C under low As4 overpressure, a single InAs quantum dot per nanohole is obtained for a broad range of sizes of pattern motifs. The use of these InAs quantum dots as seed nuclei for vertical stacking of optically active single InAs site-controlled quantum dots is investigated.
Versión del editorhttp://dx.doi.org/10.1021/cg5013632
URIhttp://hdl.handle.net/10261/130381
DOI10.1021/cg5013632
ISSN1528-7483
E-ISSN1528-7505
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