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| Título: | Interfacial effects on the tunneling magnetoresistance in L a0.7 S r0.3Mn O3/MgO/Fe tunneling junctions |
Autor: | Galceran, Regina CSIC ORCID; Balcells Argemi, Lluis; Cisneros Fernández, José; Mata, Maria de la CSIC ORCID; Arbiol, Jordi CSIC ORCID CVN; Cebollada, Alfonso CSIC ORCID; Martínez Perea, Benjamín CSIC ORCID | Fecha de publicación: | 16-sep-2015 | Editor: | American Physical Society | Citación: | Physical Review B 92: 094428 (2015) | Resumen: | © 2015 American Physical Society. We report on magnetotransport properties on La0.7Sr0.3MnO3/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO3 substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by the interface destroys the Δ1 symmetry filtering effect of the MgO/Fe system and only a small negative tunneling magnetoresistance (TMR) (∼-3%) is measured. However, in annealed samples a switchover from positive TMR (∼+25% at 70 K) to negative TMR (∼-1%) is observed around 120 K. This change is associated with the transition from semiconducting at high T to insulating at low T taking place at the Verwey transition (TV∼120K) in Fe3O4, thus suggesting the formation of a very thin slab of magnetite at the MgO/Fe interface during annealing treatments. These results highlight the relevance of interfacial properties on the tunneling conduction process and how it can be substantially modified through appropriate interface engineering. | Descripción: | Galceran, Regina et al. | Versión del editor: | http://dx.doi.org/10.1103/PhysRevB.92.094428 | URI: | http://hdl.handle.net/10261/130270 | DOI: | 10.1103/PhysRevB.92.094428 | Identificadores: | e-issn: 1550-235X issn: 1098-0121 |
| Aparece en las colecciones: | (IMN-CNM) Artículos (ICMAB) Artículos |
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| tunneling_magnetoresistance_Galceran.pdf | 880,66 kB | Adobe PDF |  Visualizar/Abrir |
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