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Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

AutorPérez Taborda, Jaime Andrés; Riascos Landazuri, Henry; Vera Londono, Liliana Patricia
Palabras claveAluminum nitride
III-V semiconductor materials
Optical surface waves
Rough surfaces
Surface treatment
Fecha de publicación15-ene-2016
EditorInstitute of Electrical and Electronics Engineers
CitaciónIEEE Sensors Journal 16(2): 359 -364 (2016)
ResumenAluminum nitride (AlN) thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray reflectometry analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles. Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. The X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical composition of the films. These measurements detected carbon and oxygen contamination at the surface. In the high-resolution XPS Al2p data, binding energies for Al-N and Al-O species were identified but no Al-Al species were present. In the N1s data, N-O species were not detected, but chemically bonded O was present in the films as Al-O species. Furthermore, the value of optical energy gap, Eg was ~5.3 (±0.1) eV. The composition varied with process conditions, and the nitrogen content decreased in AlN films processed above 500 °C.
Versión del editorhttp://dx.doi.org/10.1109/JSEN.2015.2466467
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