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Título

Raman study of Zn1-xMnxGa2Se4 diluted magnetic semiconductors: disorder and resonance effects

AutorSanjuán, M. L.; Morón, M. Carmen
Palabras claveResonance phenomena
Diluted magnetic semiconductors
Raman scattering
Fecha de publicación2002
EditorElsevier
CitaciónPhysica B: Condensed Matter 316-317: 565-567 (2002)
ResumenA RT Raman study of the diluted magnetic semiconductors Zn1-xMnxGaSe4 (0less than or equal to x less than or equal to1) is presented. The end compounds ZnGa2Se4 and MnGa2Se4 crystallize in the 1 (4) over bar 2m and 1 (4) over bar space groups, in which 12 and 13 Raman active modes are expected, respectively. A full mode assignment has been made for MnGa2Se4. Disorder effects are seen for x < 1 compounds due to partially disordered cation distribution. Resonance effects are observed depending on x, in agreement with the evolution of the optical gap.
URIhttp://hdl.handle.net/10261/128799
Identificadoresissn: 0921-4526
e-issn: 1873-2135
Aparece en las colecciones: (ICMA) Artículos
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