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dc.contributor.authorGonzález-Arrabal, Raquel-
dc.contributor.authorGonzález Díez, Yolanda-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorGarcía-Hernández, M.-
dc.contributor.authorMunnik, F.-
dc.contributor.authorMartín-González, Marisol-
dc.date.accessioned2009-04-30T11:21:32Z-
dc.date.available2009-04-30T11:21:32Z-
dc.date.issued2009-04-06-
dc.identifier.citationJournal of Applied Physics 105, 073911 (2009)en_US
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10261/12729-
dc.description.abstractWe report on the magnetic and structural properties of Ar- and Mn-implanted InAs epitaxial films grown on GaAs (100) by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) for 30 s at 750 °C. Channeling particle induced x-ray emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are substitutional in the In site of the InAs lattice, like in a diluted magnetic semiconductor. All of these samples show diamagnetic behavior. However, after RTA treatment the Mn–InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments was performed with Ar as implantation ion, all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagneticlike behavior in the Mn–InAs-RTA layer is not related to lattice disorder produced during implantation but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns and Rutherford backscattering measurements evidence the segregation of an oxygen-deficient MnO2 phase (nominally MnO1.94) in the Mn–InAs-RTA epitaxial layers which might be the origin of the room-temperature ferromagneticlike response observed.en_US
dc.description.sponsorshipThis work was supported by CSIC Grant Nos. 2006-50F0122 and CSIC 2007-50I015 and in part by Grant No.MAT2005-06024-C02-01. R.G.A. acknowledges the MEC and CSIC for the Juan de la Cierva financial support. The PIXE measurements have been supported by the EU-“Research Infrastructures Transnational Access” program AIM “Center for Application of Ion Beams in Materials Research” under EC Contract No. 025646.en_US
dc.format.extent399089 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectArgon compoundsen_US
dc.subjectChannellingen_US
dc.subjectDiamagnetismen_US
dc.subjectFerromagnetic materialsen_US
dc.subjectGallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium compoundsen_US
dc.subjectIon implantationen_US
dc.subjectMagnetic susceptibilityen_US
dc.subjectMagnetic thin filmsen_US
dc.subjectManganese compoundsen_US
dc.subjectMolecular beam epitaxial growthen_US
dc.subjectX-ray diffractionen_US
dc.subjectX-ray chemical analysisen_US
dc.subjectRutherford backscatteringen_US
dc.subjectSemiconductor epitaxial layersen_US
dc.titleRoom-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxyen_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.3087477-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://link.aip.orgen_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.3087477en_US
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
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item.languageiso639-1en-
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