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Title

Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

AuthorsGonzález-Arrabal, Raquel ; González Díez, Yolanda ; González Sotos, Luisa ; García-Hernández, M. ; Munnik, F.; Martín-González, Marisol
KeywordsArgon compounds
Channelling
Diamagnetism
Ferromagnetic materials
Gallium arsenide
III-V semiconductors
Indium compounds
Ion implantation
Magnetic susceptibility
Magnetic thin films
Manganese compounds
Molecular beam epitaxial growth
X-ray diffraction
X-ray chemical analysis
Rutherford backscattering
Semiconductor epitaxial layers
Issue Date6-Apr-2009
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 105, 073911 (2009)
AbstractWe report on the magnetic and structural properties of Ar- and Mn-implanted InAs epitaxial films grown on GaAs (100) by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) for 30 s at 750 °C. Channeling particle induced x-ray emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are substitutional in the In site of the InAs lattice, like in a diluted magnetic semiconductor. All of these samples show diamagnetic behavior. However, after RTA treatment the Mn–InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments was performed with Ar as implantation ion, all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagneticlike behavior in the Mn–InAs-RTA layer is not related to lattice disorder produced during implantation but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns and Rutherford backscattering measurements evidence the segregation of an oxygen-deficient MnO2 phase (nominally MnO1.94) in the Mn–InAs-RTA epitaxial layers which might be the origin of the room-temperature ferromagneticlike response observed.
Publisher version (URL)http://link.aip.org
http://dx.doi.org/10.1063/1.3087477
URIhttp://hdl.handle.net/10261/12729
DOI10.1063/1.3087477
ISSN0021-8979
Appears in Collections:(IMN-CNM) Artículos
(ICMM) Artículos
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