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Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

AutorPreziosi, Daniele; Fina, Ignasi ; Alexe, Marin
Fecha de publicación2014
EditorAmerican Physical Society
CitaciónPhysical Review B 90(12): 125155 (2014)
ResumenFerroelectric field-effect devices based on perovskite oxide materials offer a new possibility to exploit emergent interfacial effects such as the electrostatic modification of the transport and magnetic properties of strongly correlated materials and to prove the magneto-electric coupling at the interface between the two different ferroic materials. Here we report on the reversible modulation of the interfacial magnetic and magnetotransport properties of La0.825Sr0.175MnO3 thin films induced by switching the ferroelectric polarization of a top PbZr0.2Ti0.8O3 layer. Anisotropic magnetoresistance (AMR) measurements were performed applying a magnetic field H in a plane perpendicular to the current density. By rotating H from the out-of-plane towards the in-plane direction, upon the ferroelectric polarization switching, a modulation of the normalized AMR amplitude was achieved. The dynamical electrostatic coupling at the interface of the two oxides is responsible for a reconstruction of the Mn3deg orbitals which in turn affects the surface magnetic anisotropy of the magneto-electric system. The present work might have a broader impact, including in the field of multiferroic tunnel junctions, due to a better understanding of the coupling at the interface of the two ferroic oxides where the influence of the polarization on the magnetic degree of freedom is accomplished.
DescripciónUnder the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.
Versión del editorhttp://dx.doi.org/10.1103/PhysRevB.90.125155
Identificadoresdoi: 10.1103/PhysRevB.90.125155
issn: 1098-0121
e-issn: 1550-235X
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