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Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process

AuthorsFisher, Craig A.; Pérez-Tomás, Amador
KeywordsCarrier lifetime
High temperature oxidation
PiN diode
Issue Date2014
PublisherInstitute of Electrical and Electronics Engineers
CitationIEEE Transactions on Semiconductor Manufacturing 27(3): 443-451 (2014)
AbstractIn this paper, the application of a novel combined high temperature thermal oxidation and annealing process to mesa-isolated epitaxial-anode 4H-SiC PiN diodes with thick (110 ¿m) drift regions is presented, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material having undergone this process, which consisted of a thermal oxidation in dry pure O2 at 1550°C followed by an argon anneal at the same temperature. Forward current-voltage characterization showed that the oxidised/annealed samples typically showed around 15% lower forward voltage drop and around 40% lower differential on-resistance (at 100 A/cm2 and 25°C) compared to control sample PiN diodes, whilst reverse recovery tests indicated a carrier lifetime increase also of around 40%. These findings illustrate that the use of this process is a highly effective and efficient way of improving the electrical characteristics of high voltage 4H-SiC bipolar devices.
Identifiersdoi: 10.1109/TSM.2014.2336701
issn: 0894-6507
Appears in Collections:(CIN2) Artículos
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