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Title

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

AuthorsShah, V. A.; Chávez, Emigdio ; Shchepetov, A.; Reparaz, J. S. ; Wagner, M. R. ; Alzina, Francesc ; Prunnila, M.; Sotomayor Torres, C. M.
Issue Date2014
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 115(14): 144307 (2014)
AbstractA thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.
DescriptionUnder the terms of the Creative Commons Attribution (CC BY) license to their work.-- et al.
Publisher version (URL)http://dx.doi.org/10.1063/1.4870807
URIhttp://hdl.handle.net/10261/126922
DOI10.1063/1.4870807
Identifiersdoi: 10.1063/1.4870807
issn: 0021-8979
e-issn: 1089-7550
Appears in Collections:(CIN2) Artículos
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