English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/126922
Compartir / Impacto:
Estadísticas
Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Título

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

AutorShah, V. A.; Chávez, Emigdio ; Shchepetov, A.; Reparaz, J. S. ; Wagner, M. R. ; Alzina, Francesc ; Prunnila, M.; Sotomayor Torres, C. M.
Fecha de publicación2014
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 115(14): 144307 (2014)
ResumenA thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.
DescripciónUnder the terms of the Creative Commons Attribution (CC BY) license to their work.-- et al.
Versión del editorhttp://dx.doi.org/10.1063/1.4870807
URIhttp://hdl.handle.net/10261/126922
DOI10.1063/1.4870807
Identificadoresdoi: 10.1063/1.4870807
issn: 0021-8979
e-issn: 1089-7550
Aparece en las colecciones: (CIN2) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
nano-membranes.pdf2,95 MBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 

Artículos relacionados:


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.