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Raman scattering study of LO phonon-plasmon coupled modes in p-type InGaAs

AuthorsCuscó, Ramón ; Domènech-Amador, Núria ; Hung, P.Y.; Loh, W.-Y.; Droopad, R.; Artús, Lluís
KeywordsRaman scattering
III–V ternary alloys
Phonon–plasmon coupled modes
Issue Date2015
CitationJournal of Alloys and Compounds 634: 87- 93 (2015)
Abstract© 2015 Elsevier B.V. We present a Raman scattering study of LO phonon-coupled modes in Be-doped, p-type In0.53Ga0.47As with hole densities ranging from 2.2×1017 to 2.4×1019 cm-3. Two separate phonon-like coupled modes are observed in the optical-phonon spectral region, corresponding to InAs-like and GaAs-like overdamped modes. With increasing free-hole density, these modes exhibit a redshift and their frequencies approach the respective TO frequencies. Unlike the case of n-type material, no high-frequency L+ coupled mode could be detected. The Raman spectra are analyzed using a dielectric model based on the Lindhard-Mermin susceptibility that takes into account HH and LH intraband transitions as well as HH-LH interband transitions. The model yields good quality fits to the experimental spectra. It is shown that the inter-valence-band processes introduces an additional damping channel that causes the L+ mode to be damped out. The comparison between the Raman spectra and the theoretical line-shape calculations suggests the presence of a residual strain and a reduced sublattice interaction in the most heavily doped samples.
Publisher version (URL)http://dx.doi.org/10.1016/j.jallcom.2015.01.225
Identifiersdoi: 10.1016/j.jallcom.2015.01.225
issn: 0925-8388
Appears in Collections:(ICTJA) Artículos
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