English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/124289
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Polarization switching at room temperature of undoped BiFeO3 thin films crystallized at temperatures between 400 ≤ T ≤ 500 °C

AutorPérez-Rivero, Armando ; Tomczyk, M.; Jiménez, Ricardo ; Bretos, Íñigo ; Ricote, J. ; Vilarinho, P. M.; Calzada, M. L.
Fecha de publicación8-may-2015
CitaciónJournal of Materials Science: Materials in Electronics: 1-14 (2015)
ResumenPure BiFeO3 perovskite thin films have been prepared on Pt-coated silicon substrates by chemical solution deposition at temperatures below 500 °C. Precursor solutions with and without Bi(III) excess have been used. Perovskite films without crystalline secondary phases, as detected by X-ray diffraction analysis, are obtained at the lowest temperature limit of 400 °C. However, the scanning electron micrographs of these films show surface microstructures formed by well defined grains surrounded by a fine grained phase, suggesting the appearance of a volume fraction of crystals in an early stage of crystallization. The films prepared with Bi(III) excess have better defined ferroelectric hysteresis loops than those without any excess, especially for the films annealed at 400 °C, which can be attributed to an improved connectivity of the ferroelectric phase. This together with the fact that leakage current densities in the films decrease with decreasing the processing temperature, make that the BiFeO3 films prepared with Bi(III) excess and annealed at 400 and 450 °C can be poled at room temperature, obtaining an effective switching of the ferroelectric polarization with the electric field. Remanent polarization values of PR ~ 10 and ~60 μC/cm2 with coercive fields of EC ~ 205 and 235 kV/cm were obtained for the films prepared at 400 and 450 °C, respectively. The demonstration of the functionality at room temperature of these low temperature processed undoped BiFeO3 thin films increases the interest in these materials for their integration in multiferroic devices.
Versión del editorhttp://dx.doi.org/10.1007/s10854-015-3150-9
Aparece en las colecciones: (ICMM) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
polarization_switching_Perez.pdf1,77 MBAdobe PDFVista previa
Mostrar el registro completo

Artículos relacionados:

NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.