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A UV-absorber bismuth(III)-N-methyldiethanolamine complex as a low-temperature precursor for bismuth-based oxide thin films

AutorPérez-Mezcua, Dulce; Sirera Bejarano, Rafael; Jiménez, Ricardo ; Bretos, Íñigo ; Dobbelaere, Christopher de; Hardy, An; Baelc, Marlies, K. van; Calzada, M. L.
Fecha de publicación28-ago-2014
EditorRoyal Society of Chemistry (Great Britain)
CitaciónJournal of Materials Chemistry C 2: 8750-8760 (2014)
Resumen© the Partner Organisations 2014. Novel synthetic methods in solution that reduce the formation temperature of bismuth-based electronic oxides are essential for their successful integration with substrates of low thermal stability within micro- and flexible-electronic devices. This has become crucial for these oxides, since they appear as promising low-toxic functional materials alternative to other electronic oxides containing heavy metals. However, this is a challenge, since the crystallization of bismuth oxides occurs at high temperatures. To overcome these problems, we synthesize here a UV-absorber charge transfer metal complex in solution between the Bi(iii) ion and an alkanolamine, N-methyldiethanolamine (Bi(iii)-mdea). We take advantage of the photoreactivity of this complex to prepare bismuth-based oxide thin films at low temperature, which cannot be achieved by traditional thermal processing methods. Room temperature stable oxide thin films of the high-temperature δ-Bi2O3 phase are prepared from these solutions by UV-irradiation and annealing at 350 °C. The efficiency of this synthetic strategy is additionally proven for the low temperature preparation of thin films of much more complex bismuth based functional oxides: the multiferroic bismuth ferrite, BiFeO3, and the relaxor-ferroelectric perovskite of bismuth, sodium and barium titanate, (Bi0.5Na0.5)0.945Ba0.055TiO3. This journal is
Versión del editorhttp://dx.doi.org/10.1039/c4tc00960f
Identificadoresdoi: 10.1039/c4tc00960f
issn: 2050-7526
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