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New irradiation facilities for components testing at the CNA

AuthorsMuñiz, Gema ; Morilla, Yolanda ; Praena, Javier
Issue Date2013
CitationWS-CPAN (2013)
AbstractThe reliability of a device under radiation can be studied, among others, based on the eventual impact of a particle (Single Event Effects, SEEs) or according to a given dose of radiation accumulated (Total Ionization Dose TID). In the last years, the National Centre for Accelerators (CNA) has developed part of its own research studying the production of circuit failures "in vivo" due to different particles radiation, varying the energy and fluence. Starting up in the framework of CEIDES Project, subproject of *RENASER +. In this work, we will present the new capabilities of the CNA to perform components irradiation testing. Thanks to its status as ICTS, the CNA has installed one gamma radiation equipment for research, model Gammabeam ® X200 (GBX200) Best Theratronics company. The source installed in the irradiator of this Centre, with an initial activity of 434 TBq (11,725 Ci), has become the most active in our Country. This will encourage photon irradiation studies, complementing the research in particles irradiation developed in the 3 MV tandem and cyclotron accelerators. The new facility is available for use by the whole scientific community and companies interested in different fields of application. At first, the laboratory set-up is being done together with the company ALTER Technology (Member of TÜV NORD) within the RADLAB project, which is associated to INNPACTO scientific program and funding by MINECO. The primary objective is to perform irradiation tests of total dose on electronic devices for aerospace application. Besides aerospace, the facility is intended to use for applications in High Energy Physics, Materials Science, Biomedical or ionizing radiation metrology. The RADLAB project also involves the starting up of a neutron irradiation facility to study different SEEs in electronic devices. The energy spectrum of the atmospheric neutrons ranges over more than 10 orders of magnitude but the main focus is on the high energy end (>10 MeV). These neutrons cause most of the SEE in microelectronics. In particular, it has been shown that atmospheric neutron SEU and SEFI cross-sections from 14 MeV neutrons are within <2 compared to neutron beams from spallation sources. Neutron beams suitable for such studies can be produced by the Cyclotron and Tandem at CNA through the 3H(d,n)4He reaction. Preliminary studies will be performed by means the 2H(d,n)3He reaction.
DescriptionResumen del trabajo presentado al CPAN Workshop on Technology Transfer, celebrado en Sevilla (España) del 24 al 25 de junio de 2013.-- et al.
Appears in Collections:(CNA) Comunicaciones congresos
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