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Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

AuthorsGuzmán, Álvaro; Yamamoto. Kenji; Ulloa, J. M.; Llorens Montolio, José Manuel ; Hierro, Adrián
Issue Date6-Jul-2015
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 107(1): 011101 (2015)
Abstract© 2015 AIP Publishing LLC. InAs/GaAs1−xSbx Quantum Dot (QD) infrared photodetectors are analyzed by photocurrent spectroscopy. We observe that the integrated responsivity of the devices is improved with the increasing Sb mole fraction in the capping layer, up to 4.2 times for x=17%. Since the QD layers are not vertically aligned, the vertical transport of the carriers photogenerated within the QDs takes place mainly through the bulk material and the wetting layer of the additional QD regions. The lower thickness of the wetting layer for high Sb contents results in a reduced capture probability of the photocarriers, thus increasing the photoconductive gain and hence, the responsivity of the device. The growth of not vertically aligned consecutive QD layers with a thinner wetting layer opens a possibility to improve the performance of quantum dot infrared photodetectors.
Publisher version (URL)http://dx.doi.org/10.1063/1.4926364
Identifiersdoi: 10.1063/1.4926364
issn: 0003-6951
e-issn: 1077-3118
Appears in Collections:(IMN-CNM) Artículos
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